| PART |
Description |
Maker |
| AS7C252MNTD18A AS7C252MNTD18A_V1.2 AS7C252MNTD18A- |
2.5V 2M x 18 Pipelined SRAM with NTD 2M X 18 ZBT SRAM, 3.2 ns, PQFP100
From old datasheet system
NTD? Sync SRAM - 2.5V
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| DS1250W DS1250WP-150 DS1250WP-150-IND 1250W DS1250 |
From old datasheet system
3.3V 4096k Nonvolatile SRAM 3.3 4096k非易失SRAM
3.3V 4096k Nonvolatile SRAM 512K X 8 NON-VOLATILE SRAM MODULE, 150 ns, DMA34
|
http://
DALLAS[Dallas Semiconductor]
Dallas Semiconducotr
MAXIM - Dallas Semiconductor
Electronic Theatre Controls, Inc.
Maxim Integrated Products, Inc.
|
| AS7C33256PFD32_36A AS7C33256PFD32-36AV.1.2 AS7C332 |
3.3V 256K x 32/36 pipelined burst synchronous SRAM
From old datasheet system
Sync SRAM - 3.3V
|
ALSC[Alliance Semiconductor Corporation]
|
| AS7C331MPFD18A_V.1.3 AS7C331MPFD18A-166TQIN AS7C33 |
3.3V 1M x 18 pipelined burst synchronous SRAM 1M X 18 STANDARD SRAM, 3.8 ns, PQFP100
From old datasheet system
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| AS5C2568 AS5C2568DJ-20_XT AS5C2568DJ-12_883C AS5C2 |
SRAM
32K x 8 SRAM SRAM MEMORY ARRAY
SRAM 静态存储器
|
ETC
AUSTIN[Austin Semiconductor]
Electronic Theatre Controls, Inc.
|
| AS7C33512FT18A AS7C33512FT18A.V1.1 AS7C33512FT18A- |
3.3V 512K x 18 Flow-through synchronous SRAM 512K X 18 STANDARD SRAM, 10 ns, PQFP100
Film Capacitor; Voltage Rating:630VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.0082uF; Capacitance Tolerance: 10%; Lead Pitch:10mm; Leaded Process Compatible:No; Package/Case:C; Peak Reflow Compatible (260 C):No RoHS Compliant: No
From old datasheet system
Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| DS1230 DS1230W DS1230WP-150-IND 1230W DS1230W-100 |
3.3V 256k Nonvolatile SRAM
3.3V 256K Nonovolatile SRAM
From old datasheet system
|
MAXIM - Dallas Semiconductor
DALLAS[Dallas Semiconducotr]
|
| R1LP0408C R1LP0408CSB-5SI R1LP0408CSB-7LI R1LP0408 |
Wide Temperature Range Version 4 M SRAM (512-kword ??8-bit)
R1LP0408C-I Series Datasheet 78K/AUG.01.03
Standard Thick Film Chip Resistor: 10 ohms through 10 megohms, 5 %, 200 ppm, .100 W
Wide Temperature Range Version 4 M SRAM (512-kword 8-bit)
Wide Temperature Range Version 4 M SRAM (512-kword × 8-bit)
Wide Temperature Range Version 4 M SRAM (512-kword 8-bit)
Wide Temperature Range Version 4 M SRAM (512-kword 】 8-bit)
Memory>Low Power SRAM
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Renesas
|
| AS7C33256NTF32_36A AS7C33256NTF32-36A.V.1.1 AS7C33 |
3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD 256K X 32 ZBT SRAM, 8.5 ns, PQFP100
3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD 256K X 32 ZBT SRAM, 10 ns, PQFP100
3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD 256K X 36 ZBT SRAM, 8.5 ns, PQFP100
3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD 256K X 36 ZBT SRAM, 7.5 ns, PQFP100
DIODE ZENER SINGLE 1000mW 24Vz 10.5mA-Izt 0.05 5uA-Ir 18.2Vr DO41-GLASS 5K/REEL
DIODE ZENER SINGLE 1000mW 36Vz 7mA-Izt 0.05 5uA-Ir 27.4Vr DO41-GLASS 5K/REEL
From old datasheet system
NTD? Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| IDT71342L35L52 IDT71342S55J IDT71342S35J |
x8 Dual-Port SRAM x8双端口SRAM
From old datasheet system
Memory - Datasheet Reference
|
Glenair, Inc.
Integrated Device Technology Inc
|
